Title :
Verification of a generalized nonlinear FET/HEMT modeling through a class A power amplifier design
Author :
Wei, Zhijun ; Johnson, J. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
Abstract :
A pHEMT transistor is modeled via a generalized nonlinear FET/HEMT modeling approach. The model shows an accurate response over all three variables (power level, bias, and frequency) compared to measurements. Modeling also includes the nonlinear response at the gate. The pHEMT transistor model is utilized in this paper to design a 3 GHz class A power amplifier to verify its validity. The predicted output power, gain, and drain efficiency at 1 dB gain compression are 14.2 dBm, 14.7 dB, and 32.1%. The measured are 12 dBm, 13.5 dB, and 27.4%, which shows good agreement with the simulation
Keywords :
high electron mobility transistors; microwave power amplifiers; semiconductor device models; 1 dB; 3 GHz; class A power amplifier design; nonlinear FET model; nonlinear HEMT modelling; nonlinear response; pHEMT transistor model; Diodes; Equations; FETs; Frequency; HEMTs; PHEMTs; Power amplifiers; Power generation; Power measurement; Scattering parameters;
Conference_Titel :
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location :
Covington, KY
Print_ISBN :
0-7803-9197-7
DOI :
10.1109/MWSCAS.2005.1594257
