Author_Institution :
Samsung Electron. Co., Kyungki, South Korea
Abstract :
1T1C FRAM technology, especially 1T1C COB FRAM, is reviewed and discussed in views of key concerning issues such as cell size factor, ferroelectric capacitor and plug technology. The reduction of cell size factor is essential for high-density application. The weakness of FRAM in achieving small cell size is firstly expounded, and possible solution is proposed. The highly reliable ferroelectric capacitor technology for 1T1C FRAM is introduced and its own peculiar technology, plug technology, of 1T1C COB FRAM is dealt with for high-density application. The recent advances of design technology for 1T1C FRAM is also presented. With these technologies, 1T1C COB FRAM is now highly manufacturable and shows a great potential as an ideal new memory
Keywords :
ferroelectric capacitors; ferroelectric storage; random-access storage; 1T1C COB FRAM; 1T1C FRAM; cell size factor; ferroelectric capacitor; high-density memory; plug technology; Consumer electronics; Electrodes; Etching; Ferroelectric films; Ferroelectric materials; MIM capacitors; Manufacturing; Nonvolatile memory; Plugs; Random access memory;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934488
