Title :
40-Gb/s, 0.18-μm CMOS Front-End Amplifier for VSR Parallel Optical Receiver
Author :
Li Zhiqun ; Xue Zhaofeng ; Chen Lili ; Wang Zhigong ; Feng Jun
Author_Institution :
Inst. of RF - & OE - ICs, Southeast Univ., Nanjing, China
Abstract :
A 40-Gb/s integrated parallel optical receiver front-end amplifier for VSR (very short reach) optical fiber transmission systems has been developed. It was designed and fabricated in a 0.18-mum CMOS technology and consists of 12 channels in parallel with a data rate of 3.318-Gb/s in each channel. A regulated-cascode (RGC) structure and noise optimization were used in the design of transimpedance amplifier (TIA), which overcomes the inadequate bandwidth problem caused by the large parasitic capacitance effect of the photodiode and CMOS transistors. An isolation structure combined with P+ guard-ring (PGR), N+ guard-ring (NGR), and deep-n-well (DNW) for parallel amplifier is also presented, which could effectively reduce the crosstalk and suppress the substrate noise coupling. The experimental results indicate that, with a parasitic capacitance of 2 pF at the input node, a single channel is able to work at 3.318 Gb/s and a clear eye diagram is obtained with a 2 mVpp input. With a 1.8 V supply, each channel of the front-end amplifier consumes a DC power of 85 mW, and the total power consumption of 12 channels is about 1 W.
Keywords :
CMOS integrated circuits; amplifiers; cascade systems; integrated optoelectronics; optical crosstalk; optical fibre communication; optical receivers; photodiodes; transistors; CMOS fabrication technique; CMOS transistor; N+ guard-ring; P+ guard-ring; bit rate 3.318 Gbit/s; bit rate 40 Gbit/s; capacitance 2 pF; crosstalk reduction; deep-n-well; integrated parallel optical receiver front-end amplifier; optical fiber transmission system; parasitic capacitance effect; photodiode; power 1 W; power 85 mW; regulated-cascode structure; size 0.18 mum; transimpedance amplifier; voltage 1.8 V; CMOS technology; Crosstalk; Design optimization; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Optical noise; Optical receivers; Parasitic capacitance; Semiconductor optical amplifiers;
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
DOI :
10.1109/SOPO.2009.5230255