Low voltage CMOS fully differential active inductor and its application to RF bandpass amplifier design

Author

Thanachayanont, Apinunt

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

fYear

2001

fDate

2001

Firstpage

125

Lastpage

128

Abstract

This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a p-channel input cascode transconductor and the newly proposed low-voltage fully-differential active inductor as an active tuned load. HSPICE simulation of the bandpass amplifier operating at a centre frequency of 1 GHz and a quality factor of 50 illustrates that a voltage gain of 50 dB and a noise figure of 4.2 dB can be achieved with a power dissipation of 46 mW from a single 1.5 V power supply voltage

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; active networks; circuit tuning; differential amplifiers; impedance matching; inductors; low-power electronics; 0.35 micron; 1 GHz; 1.5 V; 4.2 dB; 46 mW; 50 dB; HSPICE simulation; LV CMOS active inductor; RF bandpass amplifier design; RFIC; active tuned load; fully differential active inductor; inductorless RF bandpass amplifier; low voltage operation; n-well CMOS technology; p-channel input cascode transconductor; Active inductors; CMOS technology; Gain; Low voltage; Noise figure; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Transconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934499

Filename

934499