Title :
High quality factor silicon-integrated spiral inductors achieved by using thick top metal with different passivation schemes
Author :
Chu, Shao-Fu ; Chew, K.W. ; Loh, W.B. ; Wang, Y.M. ; Onn, B.G. ; Ju, Y. ; Zhang, J. ; Shao, K.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
A novel approach combining 2 μm thick top metal, stacked design and different passivation schemes has been adopted to realize high quality factor (Q) inductors fabricated using a conventional 0.25 μm 5-level metal CMOS technology. Q-factor enhancement of greater than 50% at 2.45 GHz has been achieved. It has been found that the passivation scheme utilizing 17 kÅ of high density plasma (HDP) oxide is most effective in boosting the Q-factor. The above highlighted techniques can be easily implemented in any standard CMOS technology without additional increase in cost to the end-users
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; elemental semiconductors; inductors; integrated circuit metallisation; passivation; silicon; 0.25 micron; 2.45 GHz; Q-factor enhancement; RFIC; Si; Si integrated spiral inductors; five-level metal CMOS technology; high density plasma oxide; high quality factor inductors; high-Q inductors; passivation schemes; stacked design; thick top metal layer; CMOS technology; Coils; Inductors; Passivation; Q factor; Silicon compounds; Spirals; Substrates; Testing; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934506
