DocumentCode
325434
Title
A new analytical and scaleable noise model for HFET
Author
Reuter, R. ; Tegude, F.J.
Author_Institution
Fraunhofer Inst. for Appl. Phys., Feriburg, Germany
Volume
1
fYear
1998
fDate
7-12 June 1998
Firstpage
137
Abstract
In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.
Keywords
UHF field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; HFET; analytical noise model; bias dependence; equivalent intrinsic noise sources; gate-geometry; scaleable noise model; wide bias range; Analytical models; Circuit noise; Frequency; HEMTs; MODFETs; Noise measurement; Physics; Predictive models; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.689341
Filename
689341
Link To Document