Title :
A new analytical and scaleable noise model for HFET
Author :
Reuter, R. ; Tegude, F.J.
Author_Institution :
Fraunhofer Inst. for Appl. Phys., Feriburg, Germany
Abstract :
In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.
Keywords :
UHF field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; HFET; analytical noise model; bias dependence; equivalent intrinsic noise sources; gate-geometry; scaleable noise model; wide bias range; Analytical models; Circuit noise; Frequency; HEMTs; MODFETs; Noise measurement; Physics; Predictive models; Solid modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689341
