Title :
A bias and temperature dependent noise model of heterojunction bipolar transistors
Author :
Pucel, R.A. ; Daniel, T. ; Kain, A. ; Tayrani, R.
Author_Institution :
RCP Consultants, Needleham, MA, USA
Abstract :
A bias and temperature dependent HBT noise model based on an extension of the van der Ziel noise theory is presented. An extrapolation technique is applied to the noise model that is valid for the entire bias and temperature operating range of the HBT given experimental data for a single reference condition.
Keywords :
equivalent circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; HBT noise model; bias dependent noise model; extrapolation technique; heterojunction bipolar transistors; temperature dependent noise model; van der Ziel noise theory; Bipolar transistors; Circuit noise; Delay; Extrapolation; Heterojunction bipolar transistors; Noise generators; Noise measurement; Parasitic capacitance; Temperature dependence; Temperature distribution;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689342
