DocumentCode
3254350
Title
Analysis of Subthreshold Finfet Circuits for Ultra-Low Power Design
Author
Wu, Xiaoxia ; Wang, Feng ; Xie, Yuan
Author_Institution
CSE Dept., Pennylvania Sate Univ., University Park, PA
fYear
2006
fDate
24-27 Sept. 2006
Firstpage
91
Lastpage
92
Abstract
In this paper, we first explore sub-threshold Fin-FET circuits design space, finding their optimal power supply point for minimum energy consumption. We then study soft error vulnerability in sub-threshold region. Our experiments indicate that the energy consumption in sub-threshold region can achieve 4 orders of magnitude energy saving. Compared to bulk CMOS technology, FinFET circuits have lower functional power supply and lower optimal energy consumption in subthreshold region. In addition, FinFET has better soft error immunity in sub-threshold region.
Keywords
MOSFET circuits; integrated circuit design; low-power electronics; FINFET circuits; bulk CMOS technology; minimum energy consumption; optimal power supply point; soft error vulnerability; ultra-low power design; Adders; CMOS technology; Circuits; Delay; Dynamic voltage scaling; Energy consumption; FinFETs; Inverters; Power supplies; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2006 IEEE International
Conference_Location
Taipei
Print_ISBN
0-7803-9781-9
Electronic_ISBN
0-7803-9782-7
Type
conf
DOI
10.1109/SOCC.2006.283853
Filename
4063022
Link To Document