Extrinsic elements extraction of DGMESFET

Author

Wei-Kung Deng ; Tah-Hsiung Chu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

157

Abstract

A procedure for the extraction of extrinsic elements of dual-gate MESFET (DGMESFET) is described in this paper. It is the first time to accurately extract the extrinsic elements of series resistance by considering the distributed channel resistance under the regions of two gates with the use of the "end resistance measurement" method. The extrinsic elements of capacitance and inductance are extracted by three-port Y-matrix and Z-matrix calculation from cold measurements. The developed procedure is useful for the characterization of DGMESFET.

Keywords

Schottky gate field effect transistors; capacitance; electric resistance; equivalent circuits; inductance; matrix algebra; microwave field effect transistors; semiconductor device models; DGMESFET characterization; capacitance; distributed channel resistance; dual-gate MESFET; end resistance measurement; extrinsic elements extraction; inductance; series resistance; three-port Y-matrix calculation; three-port Z-matrix calculation; Capacitance; Electric resistance; Electrical resistance measurement; Equations; Equivalent circuits; FETs; Inductance measurement; MESFETs; Microwave circuits; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689346

Filename

689346