A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for Personal Handy-phone System terminals

Author

Nakayama, M. ; Horiguchi, K.-I. ; Yamamoto, K. ; Yoshii, Y. ; Sugiyama, S. ; Suematsu, N. ; Takagi, T.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

171

Abstract

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as an RF front-end for PHS terminals.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC mixers; UHF integrated circuits; UHF mixers; cellular radio; digital radio; field effect MMIC; gallium arsenide; telephone sets; transceivers; 1.9 GHz; FET gate bias voltage generator; GaAs; GaAs MMIC; Japanese PHS handheld terminals; LNA; Personal Handy-phone System terminals; T/R switch; UHF IC; cascode FET mixer; high power amplifier; low noise amplifier; low-distortion mixer; negative voltage generator; single-chip RF front-end; FET integrated circuits; Gallium arsenide; High power amplifiers; Integrated circuit noise; Low-noise amplifiers; MMICs; Noise generators; Radio frequency; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689349

Filename

689349