Title :
A 900 MHz HBT power amplifier MMICs with 55% efficiency, at 3.3 V operation
Author :
Asano, H. ; Hara, S. ; Komai, S.
Author_Institution :
VLSI Dev. Labs., Sharp Corp., Nara, Japan
Abstract :
A 3.3 volt GSM class V power amplifier MMIC has been developed by using AlGaAs/GaAs HBTs and flip chip bonding technology. The amplifier has an output power of 32 dBm and a power added efficiency of 55%. The HBT amplifier inherently requires no negative bias and has very low leak current, 2nA. Th MMIC is assembled to small and low profile package (6.35/spl times/6.35/spl times/1.05 mm).
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; 3.3 V; 55 percent; 900 MHz; AlGaAs-GaAs; AlGaAs/GaAs HBT; GSM class V power amplifier MMIC; flip chip bonding; output power; power added efficiency; Assembly; Bonding; Flip chip; GSM; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Packaging; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689357
