Small-signal distributed FET modeling through electromagnetic analysis of the extrinsic structure

Author

Cidronali, A. ; Collodi, G. ; Santarelli, A. ; Vannini, G. ; Manes, G.

Author_Institution

Dept. of Electron. Eng., Florence Univ., Italy

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

287

Abstract

The paper presents a new approach to the distributed modeling of high frequency transistors suitable for CAD applications. In particular, electromagnetic simulation is adopted to characterize the extrinsic part of the electron device in terms of a multi-port scattering matrix without introducing approximations based on lumped components. Experimental and simulation results for 0.5 /spl mu/m GaAs MESFETs with different gate widths preliminary confirm the consistency of the proposed approach.

Keywords

S-matrix theory; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor device models; 0.5 micron; CAD applications; EM simulation; GaAs; GaAs MESFETs; electromagnetic analysis; extrinsic structure; gate widths; high frequency transistors; multi-port scattering matrix; small-signal distributed FET modeling; Distributed control; Electromagnetic devices; Electromagnetic modeling; Electromagnetic propagation; Electromagnetic scattering; Electron devices; FETs; Frequency; Scattering parameters; Symmetric matrices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689376

Filename

689376