Impact of 0.25 μm dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications

Author

Chew, K.W. ; Yeo, K.S. ; Chu, Shao-Fu ; Wang, Y.M.

Author_Institution

Mixed-Signal/RFCMOS Process Integration Group, Chartered Semicond. Manuf. Ltd., Singapore

fYear

2001

fDate

2001

Firstpage

220

Lastpage

223

Abstract

The low frequency noise performance of 0.25 μm thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model

Keywords

MOSFET; UHF field effect transistors; carrier mobility; flicker noise; semiconductor device models; semiconductor device noise; 0.25 micron; correlated mobility fluctuations model; current noise spectra; deep-submicrometer MOSFETs; dual gate oxide CMOS process; flicker noise characteristics; multi-fingered MOSFETs; number fluctuations; thin-gate transistors; 1f noise; CMOS process; CMOS technology; Circuit noise; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Semiconductor device noise; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934524

Filename

934524