Title :
An efficient clock scheme for low-voltage four-phase charge pumps
Author :
Lin, Hongchin ; Chen, Nai-Hsien
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Abstract :
A new four-phase clock scheme for the four-phase charge pumping circuits at very low supply voltages using 0.5 μm double poly CMOS technology to generate high boosted voltages is presented. The boosted clocks are applied on the capacitors connected to the gates of the major pumping transistors. With the new clock generator, the charge pump can efficiently pump to 8 V using 10 stages at Vdd=1 V by simulations and 4.7 V using 4 stages at Vdd=1.5 V by measurements
Keywords :
CMOS memory circuits; clocks; low-power electronics; pulse generators; 0.5 micron; 4.7 V; 8 V; boosted voltages; clock generator; double poly CMOS technology; low-voltage four-phase charge pumps; memory circuits; pumping transistors; very low supply voltages; CMOS technology; Capacitors; Charge pumps; Circuit simulation; Clocks; Current measurement; Degradation; Low voltage; MOSFETs; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934526
