• DocumentCode
    3254626
  • Title

    An efficient clock scheme for low-voltage four-phase charge pumps

  • Author

    Lin, Hongchin ; Chen, Nai-Hsien

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    228
  • Lastpage
    231
  • Abstract
    A new four-phase clock scheme for the four-phase charge pumping circuits at very low supply voltages using 0.5 μm double poly CMOS technology to generate high boosted voltages is presented. The boosted clocks are applied on the capacitors connected to the gates of the major pumping transistors. With the new clock generator, the charge pump can efficiently pump to 8 V using 10 stages at Vdd=1 V by simulations and 4.7 V using 4 stages at Vdd=1.5 V by measurements
  • Keywords
    CMOS memory circuits; clocks; low-power electronics; pulse generators; 0.5 micron; 4.7 V; 8 V; boosted voltages; clock generator; double poly CMOS technology; low-voltage four-phase charge pumps; memory circuits; pumping transistors; very low supply voltages; CMOS technology; Capacitors; Charge pumps; Circuit simulation; Clocks; Current measurement; Degradation; Low voltage; MOSFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-6412-0
  • Type

    conf

  • DOI
    10.1109/VTSA.2001.934526
  • Filename
    934526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3254626