Title :
X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology
Author :
Toyoda, I. ; Nishikawa, K. ; Kamogawa, K. ; Yamaguchi, C. ; Hirano, M. ; Onodera, K. ; Tokumitsu, T.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
Abstract :
The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3/spl times/2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.
Keywords :
bipolar MMIC; elemental semiconductors; silicon; transceivers; 13 dB; 20 dB; Si; X-band Si bipolar transistor single-chip transceiver; function block library; three-dimensional masterslice MMIC technology; Bipolar transistors; Frequency; Gain; Low-noise amplifiers; MIM capacitors; MMICs; Radiofrequency amplifiers; Substrates; Transceivers; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689387
