Title :
Integration of CVD W on MOCVD TiN
Author :
Yu, C.M. ; Wang, M.Y. ; Shue, S.L. ; Yu, Cody Hao ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
The integration issue of MOCVD TiN and CVD W has been investigated. The step coverage of tungsten layer was found to depend strongly on the MOCVD TiN layer. An additional thermal cycle can significantly improve step coverage of tungsten. Though the Rc value is not dependent on the step coverage of tungsten, the reliability issue is still a concern
Keywords :
MOCVD; ULSI; chemical vapour deposition; diffusion barriers; integrated circuit metallisation; integrated circuit reliability; titanium compounds; tungsten; CVD W integration; MOCVD TiN; TiN; ULSI metallisation; W; W-TiN; additional thermal cycle; diffusion barriers; hole filling; plug-fill capability; reliability issue; step coverage; Adhesives; Contact resistance; MOCVD; Plasma applications; Plasma materials processing; Plasma properties; Plugs; Tin; Tungsten; Ultra large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934534
