• DocumentCode
    3254814
  • Title

    A study of bimodal distributions of time-to-failure of copper via electromigration

  • Author

    Lai, J.B. ; Yang, J.L. ; Wang, Y.P. ; Chang, S.H. ; Hwang, R.L. ; Huang, Y.S. ; Hou, C.S.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    271
  • Lastpage
    274
  • Abstract
    Bimodal distributions of time-to-failure (TTF) were often seen in copper via electromigration (EM) tests. The failure mechanism of the stressed samples could be correlated to time-to-failure of the EM test. Early-failures were via-related, whereas late-failures were metal-stripe-related. The failure mechanisms are discussed
  • Keywords
    copper; electromigration; failure analysis; integrated circuit metallisation; integrated circuit reliability; Cu; Cu via electromigration; bimodal distributions; early failures; failure mechanism; late failures; metal-stripe-related failures; stressed samples; time-to-failure; via electromigration tests; via-related failures; Artificial intelligence; Copper; Electromigration; Failure analysis; Grain boundaries; Scanning electron microscopy; Semiconductor device manufacture; Testing; Transmission electron microscopy; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-6412-0
  • Type

    conf

  • DOI
    10.1109/VTSA.2001.934537
  • Filename
    934537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3254814