Title :
Isothermal wafer-level electromigration test for the characterization of metal system reliability monitoring
Author :
Kuo, C.Y. ; Yuan, H.C. ; Lee, S.C. ; Lee, S.Y. ; Chu, L.H. ; Shiue, R.Y. ; Yue, John T.
Author_Institution :
Reliability Assurance-1 Dept., Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
A fast isothermal wafer-level electromigration method has been demonstrated to evaluate interconnect metal line performance. The stress current is increased quickly until the metal line temperature reached the stress target temperature. This test method offers a significant short test time and rapid feedback to bring reliability issues into the development process. Interconnect metal lines with width/thickness of 0.9 μm/4000 Å and 1.2 μm/8000 Å of this study were processed and stressed. Results show that the metal line mean-time-to-failure and resistance are affected when the dimension is lost. This isothermal electromigration test methodology is therefore shown to be a useful tool for process monitoring
Keywords :
electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; process monitoring; production testing; 0.9 micron; 1.2 micron; MTTF; fast test method; interconnect metal line performance; isothermal electromigration test; mean-time-to-failure; metal line resistance; metal system reliability monitoring; process monitoring; reliability monitoring characterisation; stress current; wafer-level electromigration test; Electromigration; Feedback; Isothermal processes; Packaging; Reliability; Solvents; Stress; System testing; Temperature; Wafer scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934538
