Title :
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD ´01 (IEEE Cat. No.01CH37216)
Abstract :
The following topics were dealt with: SiC devices; packaging and reliability; RF devices; high-voltage devices; MOSFETs; LD MOSFETs; super-junction technology; IGBTs
Keywords :
power semiconductor devices; IGBTs; LD MOSFETs; MOSFETs; RF devices; SiC devices; high-voltage devices; packaging; power semiconductor devices; reliability; super-junction technology;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934547
