5.5 kV normally-off low RonS 4H-SiC SEJFET

Author

Asano, K. ; Sugawara, Y. ; Ryu, S. ; Singh, R. ; Palmour, J. ; Hayashi, T. ; Takayama, D.

Author_Institution

Tech. Res. Center, Kansai Electr. Power Co., Amagasaki, Japan

fYear

2001

fDate

2001

Firstpage

23

Lastpage

26

Abstract

A normally-off type 5.5 kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p⁺ regions as a gate in addition to the top p⁺ regions. The achieved blocking voltage (BV) is the highest BV among the reported SiC switching devices. By the expansion of the channel region under the positive biases of both gates, specific on-resistance (R_onS) can be reduced and 218 mΩcm² achieved. Furthermore, a 4H-SiC SEJFET with a BV of 4.45 kV has been fabricated, which has the largest figure of merit BV ²/RonS of 164 MW/cm²

Keywords

junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 4H-SiC SEJFET; 5.5 kV; SiC; blocking voltage; figure of merit; normally-off type device; power semiconductor device; specific on-resistance; static expansion channel junction field effect transistor; switching device; Doping; FETs; Leakage current; Power semiconductor devices; Silicon carbide; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934551

Filename

934551