• DocumentCode
    3255254
  • Title

    High-performance energy-efficient memory circuit technologies for sub-45nm technologies

  • Author

    Agarwal, Amit ; Krishnamurthy, Ram K.

  • Author_Institution
    Circuit Research Labs, Intel Corporation, Hillsboro, OR 97124, USA
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    322
  • Lastpage
    322
  • Abstract
    This tutorial discusses challenges and design solutions for high-performance energy efficient memory/register file circuit design. Technology scaling trends for leakage and process variation for sub-45nm technologies are analyzed, with special emphasis on their impact on wide fan in OR gates found in high performance register file. Novel high-speed and leakage/process tolerant circuits are reviewed. Leakage/process sensors which enable these processes compensating techniques are presented.
  • Keywords
    Active noise reduction; Circuit noise; Circuit synthesis; Decoding; Delay; Energy efficiency; Microprocessors; Noise robustness; Random access memory; Registers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOC Conference, 2006 IEEE International
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-9781-9
  • Electronic_ISBN
    0-7803-9782-7
  • Type

    conf

  • DOI
    10.1109/SOCC.2006.283907
  • Filename
    4063076