Title :
Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding
Author :
Hobart, K.D. ; Kub, F.J. ; Ancona, M. ; Neilson, J.M. ; Brandmier, K. ; Waind, P.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A bi-directional double-side, double-gate IGBT fabricated through a direct wafer bonding process is characterized. As a result of the symmetrical geometry the transistors have lower VCD(SAT), however, with the aid of the second MOS gate the switching dissipation is as low as that of the conventionally-gated reference IGBT. Overall, the DIGBT gives a VCD(sat)E-OFF trade-off improvement of 40% over the reference single-side IGBT
Keywords :
insulated gate bipolar transistors; wafer bonding; bi-directional double-side double-gate IGBT; direct wafer bonding; fabrication; power semiconductor device; Annealing; Anodes; Bidirectional control; Fabrication; Hafnium; Insulated gate bipolar transistors; Numerical simulation; Substrates; Temperature; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934572
