Title :
A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact
Author :
Fujishima, N. ; Sugi, A. ; Suzuki, T. ; Kanjiwara, S. ; Matsubara, K. ; Nagayasu, Y. ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
A trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, and characterized. The TLPM/S is formed along the sidewalls of the trenches so as to reduce the device pitch and realize very small on-resistance per unit area. The fabricated TLPM/S, whose device pitch is 3.6 μm, shows a specific on-resistance of 72 mΩ-mm2 for a breakdown voltage of 73 V, which is close to the estimated silicon limit for this voltage class of devices
Keywords :
power MOSFET; semiconductor device breakdown; 3.6 mum; 73 V; breakdown voltage; high-density device; specific on-resistance; trench bottom source contact; trench lateral power MOSFET; Anisotropic magnetoresistance; Capacitance; Contacts; Etching; Laboratories; MOSFET circuits; Power MOSFET; Process design; Research and development; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934576
