Title :
An ultra dense trench-gated power MOSFET technology using a self-aligned process
Author :
Zeng, Jun ; Dolny, Gary ; Kocon, Chris ; Stokes, Rick ; Kraft, Nathan ; Brush, Linda ; Grebs, Tom ; Hao, Jifa ; Ridley, Rodney ; Benjamin, John ; Skurkey, Louise ; Benczkowski, Stan ; Semple, Dexter ; Wodarczyk, Paul ; Rexer, Chris
Author_Institution :
Intersil Corp., Mountaintop, PA, USA
Abstract :
An ultra dense trench technology is reported in this paper. This advanced technology employs a fully self-aligned contact process. As a result, the cell pitch of 30 V trench-gated power MOSFETs has been reduced to 1.1 um. The specific on-resistance (including the source metal spreading resistance) of the median die size device has been reduced to 0.18 mohm.cm2 at a gate voltage of 10 V. The tradeoffs, which are given towards the optimization of ultra dense trench-gated device´s on-resistance, “Miller” charge, and breakdown voltage, are presented
Keywords :
power MOSFET; semiconductor device breakdown; 30 V; Miller charge; breakdown voltage; cell pitch; self-aligned contact process; source metal spreading resistance; specific on-resistance; ultra-dense trench-gated power MOSFET technology; Brushes; Calibration; Dielectrics; Etching; Isolation technology; MOSFET circuits; Power MOSFET; Silicon; Space technology; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934577
