• DocumentCode
    3255509
  • Title

    Avalanche-induced thermal instability in Ldmos transistors

  • Author

    Hower, P. ; Tsai, C.Y. ; Merchant, S. ; Efland, T. ; Pendharkar, S. ; Steinhoff, R. ; Brodsky, J.

  • Author_Institution
    Texas Instrum., Merrimack, NH, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    Safe operating area limits for large Ldmos are shown to be due to a thermal instability mechanism initiated by avalanche generated carriers which turn-on the parasitic bipolar transistor. An analytic model is described and is shown to agree well with experimental data
  • Keywords
    MOSFET; avalanche breakdown; semiconductor device models; thermal stability; LDMOS transistor; analytical model; avalanche generation; parasitic bipolar transistor; safe operating area; thermal instability; Bipolar transistors; Electric resistance; Instruments; Predictive models; Resistance heating; Semiconductor optical amplifiers; Surface resistance; Thermal conductivity; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934578
  • Filename
    934578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255509