Title :
Avalanche-induced thermal instability in Ldmos transistors
Author :
Hower, P. ; Tsai, C.Y. ; Merchant, S. ; Efland, T. ; Pendharkar, S. ; Steinhoff, R. ; Brodsky, J.
Author_Institution :
Texas Instrum., Merrimack, NH, USA
Abstract :
Safe operating area limits for large Ldmos are shown to be due to a thermal instability mechanism initiated by avalanche generated carriers which turn-on the parasitic bipolar transistor. An analytic model is described and is shown to agree well with experimental data
Keywords :
MOSFET; avalanche breakdown; semiconductor device models; thermal stability; LDMOS transistor; analytical model; avalanche generation; parasitic bipolar transistor; safe operating area; thermal instability; Bipolar transistors; Electric resistance; Instruments; Predictive models; Resistance heating; Semiconductor optical amplifiers; Surface resistance; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934578
