Title :
0.6 μm BiCMOS based 15 and 25 V LDMOS for analog applications
Author :
Kawaguchi, Yusuke ; Nakamura, Kazutoshi ; Karouji, Kumiko ; Watanabe, Kiminori ; Yamaguchi, Yoshihiro ; Nakagawa, Akio
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan
Abstract :
In the present paper, we report the development of complementally 25 V LDMOS, 15 V n-ch LDMOS, 18 V npn/pnp and 5 V CMOS. The developed LDMOS achieved high on-state breakdown voltages for the gate voltage of 5.0 V. The on-resistance values of the developed 15 V and 25 V n-ch LDMOS achieves 22.7 and 27.5 mn mm2, respectively. The characteristics of bipolar transistors and CMOS are also sufficiently good
Keywords :
BiCMOS analogue integrated circuits; power MOSFET; semiconductor device breakdown; 0.6 micron; 15 V; 25 V; BiCMOS analog IC; LDMOS transistor; on-resistance; on-state breakdown voltage; power MOSFET; Analog circuits; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; Fabrication; Impurities; Indium tin oxide; MOS devices;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934582
