Comparison and optimization of edge termination techniques for SiC power devices

Author

Sheridan, David C. ; Niu, Guofu ; Merrett, J. Neil ; Cressler, John D. ; Dufrene, J.B. ; Casady, J.B. ; Sankin, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

fYear

2001

fDate

2001

Firstpage

191

Lastpage

194

Abstract

Edge termination is a critical design area for high voltage SiC power devices. Current SiC termination designs derived from Si technology face new design issues when confronted with the unique physical properties and processing constraints of SiC. This paper presents the design and comparison of the prevailing planar and non-planar edge termination techniques, including: field plates, junction termination extensions (JTE), floating guard rings, and junction beveling. Termination structures are examined with respect to device type, influence of oxide charge, and current processing limitations

Keywords

power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; design optimization; edge termination; field plate; floating guard ring; high-voltage SiC power device; junction beveling; junction termination extension; nonplanar technique; oxide charge; planar technique; Design engineering; Diodes; Implants; Microelectronics; Passivation; Physics computing; Power engineering and energy; Power engineering computing; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934587

Filename

934587