Title :
Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator
Author :
Rozhkov, V.A. ; Goncharov, V.P. ; Trusova, A.Yu.
Author_Institution :
Dept. of Phys., Samara State Univ., Russia
Abstract :
This paper is devoted to electrical and photoelectrical properties of silicon MIS structures with REO insulator such as yttrium, lutetium and samarium oxide films. Interface properties and barrier energies of metal-REO and silicon-REO interfaces are the subject of these investigations
Keywords :
MIS structures; Poole-Frenkel effect; aluminium; capacitance; elemental semiconductors; insulating thin films; interface states; lutetium compounds; photoconductivity; samarium compounds; semiconductor-insulator boundaries; silicon; yttrium compounds; Al; MIS structures; REO insulator; Si-Lu2O3; Si-Sm2O3; Si-Y2O3; barrier energies; electrical properties; insulator; interface properties; lutetium oxide films; metal-REO interfaces; photoelectrical properties; rare earth oxide films; samarium oxide films; silicon MIS structures; silicon-REO interfaces; yttrium oxide films; Aluminum; Chemicals; Conductivity; Dielectric materials; Dielectrics and electrical insulation; Frequency; Optical films; Optical materials; Semiconductor films; Silicon;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
DOI :
10.1109/ICSD.1995.523047
