Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator

Author

Rozhkov, V.A. ; Goncharov, V.P. ; Trusova, A.Yu.

Author_Institution

Dept. of Phys., Samara State Univ., Russia

fYear

1995

fDate

10-13 Jul 1995

Firstpage

552

Lastpage

555

Abstract

This paper is devoted to electrical and photoelectrical properties of silicon MIS structures with REO insulator such as yttrium, lutetium and samarium oxide films. Interface properties and barrier energies of metal-REO and silicon-REO interfaces are the subject of these investigations

Keywords

MIS structures; Poole-Frenkel effect; aluminium; capacitance; elemental semiconductors; insulating thin films; interface states; lutetium compounds; photoconductivity; samarium compounds; semiconductor-insulator boundaries; silicon; yttrium compounds; Al; MIS structures; REO insulator; Si-Lu₂O₃; Si-Sm₂O₃; Si-Y₂O₃; barrier energies; electrical properties; insulator; interface properties; lutetium oxide films; metal-REO interfaces; photoelectrical properties; rare earth oxide films; samarium oxide films; silicon MIS structures; silicon-REO interfaces; yttrium oxide films; Aluminum; Chemicals; Conductivity; Dielectric materials; Dielectrics and electrical insulation; Frequency; Optical films; Optical materials; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on

Conference_Location

Leicester

Print_ISBN

0-7803-2040-9

Type

conf

DOI

10.1109/ICSD.1995.523047

Filename

523047