Title :
High frequency application of high transconductance surface-channel diamond field-effect transistors
Author :
Umezawa, Hitoshi ; Taniuchi, Hirotada ; Arima, Takuya ; Ishizaka, Hiroaki ; Fujihara, Naoki ; Ohba, Yoshikazu ; Tachiki, Minoru ; Kawarada, Hiroshi
Author_Institution :
Waseda Univ., Tokyo, Japan
Abstract :
High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES)FET with 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. An fT of more than 20 GHz is expected at 0.5 μm gate MISFET, because transconductance of a 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated
Keywords :
MISFET; Schottky gate field effect transistors; capacitance; diamond; elemental semiconductors; microwave field effect transistors; 11 GHz; 2.2 GHz; 20 GHz; 7 GHz; C; H-terminated surface channel; MESFET; MISFET; cut-off frequency; gate insulator insertion; high frequency operation; maximum oscillation frequency; source-gate capacitance; surface-channel diamond field-effect transistors; transconductance; Electrodes; FETs; Fabrication; MESFETs; MISFETs; Metal-insulator structures; Plasma measurements; Plasma temperature; Radio frequency; Transconductance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934588
