Title :
Short on-pulse reverse recovery behavior of free wheeling diode (FWD)
Author :
Nagaune, Fumio ; Miyasaka, Tadashi ; Tagami, Saburo ; Shigekane, Hisao ; Kirihata, Humiaki ; Palmer, P.R.
Author_Institution :
Fuji Hitachi Power Semicond. Co. Ltd., Nagano, Japan
Abstract :
The critical reverse recovery phenomenon of a free wheeling diode (FWD) occurring after an on-pulse current flow shorter than 1 μs has been investigated by use of an 1800 V/800 A IGBT module. In this case, the extremely high spike voltage and high dv/dt as well as the voltage-current oscillation are observed. From a two-dimensional device simulation combining an external circuit, it is concluded that the critical reverse recovery phenomenon is originated from the smaller carrier injection into the n-base layer within a short on-pulse period. The oscillation occurring after the high voltage spike generation is due to LC resonance between the completely depleted FWD chips and the inductance of external circuit. Thus the generation of high spike voltage and high dv/dt over the voltage ratings signifies the destruction of semiconductor device like a wedge-shaped damage on the guard ring region of the FWD chip edge
Keywords :
insulated gate bipolar transistors; semiconductor device models; semiconductor diodes; 2D device simulation; IGBT module; LC resonance; Si; carrier injection; critical reverse recovery; external circuit; free wheeling diode; on-pulse current flow; spike generation; spike voltage; voltage-current oscillation; wedge-shaped damage; Circuit simulation; Inductance; Insulated gate bipolar transistors; Power engineering and energy; Pulse width modulation; RLC circuits; Resonance; Semiconductor diodes; Transient analysis; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934590
