Title :
A new base resistance controlled thyristor employing trench gate and self-align corrugated p-base
Author :
Oh, Jae-Keun ; Lim, Moo-Sup ; Jeon, Byoung-Chul ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new trench-gate CB-BRT, which employs the trench gate structure in order to increase the maximum controllable current (MCC) by reducing the channel resistance, is proposed and fabricated. The experimental results show that the MCC of the trench gate CB-BRT increased by 30% and the forward voltage drop decreased by 0.2 V
Keywords :
electric potential; thyristors; base resistance controlled thyristor; channel resistance; forward voltage drop; maximum controllable current; self-align corrugated p-base; trench gate structure; Anodes; Cathodes; Circuits; Electric resistance; Fabrication; Fingers; Insulated gate bipolar transistors; MOSFETs; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934591
