DocumentCode
3255739
Title
A new base resistance controlled thyristor employing trench gate and self-align corrugated p-base
Author
Oh, Jae-Keun ; Lim, Moo-Sup ; Jeon, Byoung-Chul ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear
2001
fDate
2001
Firstpage
207
Lastpage
210
Abstract
A new trench-gate CB-BRT, which employs the trench gate structure in order to increase the maximum controllable current (MCC) by reducing the channel resistance, is proposed and fabricated. The experimental results show that the MCC of the trench gate CB-BRT increased by 30% and the forward voltage drop decreased by 0.2 V
Keywords
electric potential; thyristors; base resistance controlled thyristor; channel resistance; forward voltage drop; maximum controllable current; self-align corrugated p-base; trench gate structure; Anodes; Cathodes; Circuits; Electric resistance; Fabrication; Fingers; Insulated gate bipolar transistors; MOSFETs; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934591
Filename
934591
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