DocumentCode
3255769
Title
A 6 kV thyristor fabricated by direct wafer bonding
Author
Hobart, K.D. ; Kub, F.J. ; Pattanayak, D. ; Piccone, D. ; Pate, M. ; Hits, D. ; Rodrigues, R. ; Ayele, G. ; Colinge, C.A.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2001
fDate
2001
Firstpage
211
Lastpage
214
Abstract
High voltage thyristors have been fabricated by direct wafer bonding. Thyristors were fabricated by joining anode and cathode wafers nominally designed for 6 kV operation. Wafer bonded 100 mm diameter thyristors with breakdown voltages exceeding 7 kV were successfully fabricated. Bonded transistors with forward voltage drops comparable to control devices showed lower switching loss possibly due to advantageous recombination at the bond interface. This is the first demonstration of large area bonded power devices with breakdown voltages exceeding 6 kV
Keywords
electric potential; semiconductor device breakdown; thyristors; wafer bonding; 100 mm; 6 kV; breakdown voltage; direct wafer bonding; forward voltage drops; high voltage thyristor; large area bonded power devices; recombination; switching loss; Annealing; Boron; Fabrication; Gettering; Leakage current; Surface resistance; Temperature; Thyristors; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934592
Filename
934592
Link To Document