Title :
Fine pattern effect on leakage current and reverse recovery characteristics of MPS diode
Author :
Naito, Tatsuya ; Nemoto, Michio ; Nishiura, Akira ; Otsuki, Masahito ; Kirisawa, Mitsuaki ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. R&D Ltd., Nagano, Japan
Abstract :
In this paper, the fine pattern effect on both the leakage current and the soft recovery has been analyzed, for the first time. From experimental results, it has been achieved that the leakage current of the fine pattern MPS diode (FP-MPS) approaches to that of PiN diode while keeping high Schottky area ratio (-75%). Furthermore, FP-MPS obtains better trade-off relationship, such as Qrr-dv/dt
Keywords :
Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; Schottky area ratio; fine pattern effect; leakage current; merged PiN/Schottky diode; power device; reverse recovery characteristics; soft recovery; Anodes; Electromagnetic compatibility; Insulated gate bipolar transistors; Ion implantation; Leakage current; Magnetic switching; Pattern analysis; Research and development; Schottky barriers; Schottky diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934596
