DocumentCode
3255828
Title
Fine pattern effect on leakage current and reverse recovery characteristics of MPS diode
Author
Naito, Tatsuya ; Nemoto, Michio ; Nishiura, Akira ; Otsuki, Masahito ; Kirisawa, Mitsuaki ; Seki, Yasukazu
Author_Institution
Fuji Electr. Corp. R&D Ltd., Nagano, Japan
fYear
2001
fDate
2001
Firstpage
227
Lastpage
230
Abstract
In this paper, the fine pattern effect on both the leakage current and the soft recovery has been analyzed, for the first time. From experimental results, it has been achieved that the leakage current of the fine pattern MPS diode (FP-MPS) approaches to that of PiN diode while keeping high Schottky area ratio (-75%). Furthermore, FP-MPS obtains better trade-off relationship, such as Qrr-dv/dt
Keywords
Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; Schottky area ratio; fine pattern effect; leakage current; merged PiN/Schottky diode; power device; reverse recovery characteristics; soft recovery; Anodes; Electromagnetic compatibility; Insulated gate bipolar transistors; Ion implantation; Leakage current; Magnetic switching; Pattern analysis; Research and development; Schottky barriers; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934596
Filename
934596
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