A fast and soft recovery diode with ultra small Qrr (USQ-Diode) using local lifetime control by He ion irradiation

Author

Nishiwaki, Katsuhiko ; Kushida, Tomoyoshi ; Kawahashi, Akira

Author_Institution

Toyota Motor Corp., Aichi, Japan

fYear

2001

fDate

2001

Firstpage

235

Lastpage

238

Abstract

This paper presents an ultra small reverse recovery charge Qrr diode (USQ-Diode) for Insulated Gate Bipolar Transistor (IGBT) modules. The USQ-Diode has a thin p-layer anode with low impurity concentrations, p+ stripe anodes, and lifetime control by He ion irradiation. By employing the thin p-layer anode, the injection of holes into the n-layer as minority carriers was significantly reduced near the pn junction. By using the He ion irradiation, crystal defects for lifetime control were localized near the pn junction. With the combined effects from both the reduced injection of holes and the local lifetime control by the He ion irradiation, as compared to the conventional pn diode, the USQ-Diode realized such superior characteristics as 1/5 times smaller reverse recovery charge and 0.2 V lower forward voltage drop

Keywords

carrier lifetime; ion beam effects; minority carriers; power semiconductor diodes; He; He ion irradiation; IGBT module; USQ diode; crystal defect; fast recovery diode; forward voltage drop; freewheeling diode; impurity concentration; local lifetime control; minority carrier injection; p+ stripe anode; p-layer anode; p-n junction; soft recovery diode; ultrasmall reverse recovery charge; Anodes; Diodes; Helium; Impurities; Insulated gate bipolar transistors; Inverters; Noise reduction; Pressing; Voltage control; Waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934598

Filename

934598