DocumentCode
3255868
Title
Low-voltage SiGe power diodes
Author
Hurkx, G.A.M. ; Hijzen, E.A. ; Zandt, T.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
2001
fDate
2001
Firstpage
239
Lastpage
242
Abstract
Power diodes with an ultra-thin SiGe anode region and a breakdown voltage of 40 V have been fabricated. Experimental results have been compared with an analytical model, developed to explore the limits of this SiGe power-diode technology
Keywords
Ge-Si alloys; low-power electronics; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; 40 V; SiGe; analytical model; breakdown voltage; low-voltage SiGe power diode; ultrathin anode; Boron; Breakdown voltage; Charge carrier processes; Current density; Electric breakdown; Electrons; Germanium silicon alloys; Laboratories; Schottky diodes; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934599
Filename
934599
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