Title :
Low-voltage SiGe power diodes
Author :
Hurkx, G.A.M. ; Hijzen, E.A. ; Zandt, T.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Power diodes with an ultra-thin SiGe anode region and a breakdown voltage of 40 V have been fabricated. Experimental results have been compared with an analytical model, developed to explore the limits of this SiGe power-diode technology
Keywords :
Ge-Si alloys; low-power electronics; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; 40 V; SiGe; analytical model; breakdown voltage; low-voltage SiGe power diode; ultrathin anode; Boron; Breakdown voltage; Charge carrier processes; Current density; Electric breakdown; Electrons; Germanium silicon alloys; Laboratories; Schottky diodes; Silicon germanium;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934599
