Lateral SOI static induction rectifiers

Author

Yano, Koji ; Honarkhah, Shahla ; Salama, C. Andre T

Author_Institution

Dept. of Electr. Eng., Yamanashi Univ., Kofu, Japan

fYear

2001

fDate

2001

Firstpage

247

Lastpage

250

Abstract

The electrical characteristics of lateral SOI static induction (SI) rectifiers are compared with those of conventional rectifiers using device simulations. For the lateral SOI SI rectifier, the anode configuration, including a p⁺/n⁺/p region, yields an optimized carrier distribution in the active region to improve the trade-off between the forward voltage drop and the turnoff capability and results in a high ruggedness during the turnoff process. A 3-dimensional SI rectifier integrated in a lateral SOI MOSFET is also proposed

Keywords

power MOSFET; silicon-on-insulator; solid-state rectifiers; carrier distribution; electrical characteristics; forward voltage drop; lateral SOI MOSFET; lateral SOI static induction rectifier; numerical simulation; p⁺/n⁺/p anode; three-dimensional static induction rectifier; turn-off characteristics; Anodes; Computational modeling; Electric variables; Isolation technology; MOSFET circuits; Power integrated circuits; Rectifiers; Silicon on insulator technology; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934601

Filename

934601