• DocumentCode
    3255943
  • Title

    Flip chip power MOSFET: a new wafer scale packaging technique

  • Author

    Arzumanyan, Aram ; Sodhi, Ritu ; Kinzer, Dan ; Schofield, Hazel ; Sammon, Tim

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    This paper describes the first flip chip power MOSFET device with the lowest RDSON per footprint area in the industry. This device, with the same electrical characteristics as an SO8 packaged device, takes only 30% of the SO8 footprint. RSi × Footprint Area as low as 59 mOhm.mm2 were achieved for bi-directional device and 98 mOhm.mm2 for single device at 4.5 VGS, a 4-6 times reduction compared to regular packaged MOSFET. The typical applications for these parts include battery charging and load switching in cell phones and laptops
  • Keywords
    flip-chip devices; power MOSFET; semiconductor device packaging; bi-directional device; electrical characteristics; flip-chip power MOSFET; footprint area; on-resistance; wafer-scale packaging; Cellular phones; Chip scale packaging; Electrodes; Flip chip; MOSFET circuits; Metallization; Power MOSFET; Rectifiers; Silicon; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934602
  • Filename
    934602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255943