• DocumentCode
    3255957
  • Title

    A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

  • Author

    Fujishima, N. ; Saito, M. ; Kitamura, A. ; Urano, Y. ; Tada, G. ; Tsuruta, Y.

  • Author_Institution
    Devices Technol. Lab., Fuji Electr. Corp., Nagano, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    A 700 V lateral power MOSFET with a narrow gap double metal field plate structure is proposed. The MOSFET exhibits an improved specific on-resistance of 26 Ω mm2 and achieves extremely stable performance under long-term high-voltage operation. A power IC, which integrates the developed MOSFET using 1 μm CMOS process, has successfully been applied to AC to DC converters in portable appliances
  • Keywords
    AC-DC power convertors; CMOS integrated circuits; power MOSFET; power integrated circuits; 1 micron; 700 V; AC-to-DC converter; CMOS process; high-voltage operation; lateral power MOSFET; narrow-gap double-metal field plate; portable appliance; power IC; specific on-resistance; stability; DC-DC power converters; FETs; Laboratories; MOSFET circuits; Passivation; Power MOSFET; Power integrated circuits; Research and development; Semiconductor devices; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934603
  • Filename
    934603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255957