A half-bridge driver IC with newly designed high voltage diode

Author

Watabe, Kiyoto ; Shimizu, Kazuhiro ; Akiyama, Hajime ; Araki, Toru ; Moritani, Junichi ; Fukunaga, Masanori

Author_Institution

Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

2001

fDate

2001

Firstpage

279

Lastpage

282

Abstract

A newly designed diode is proposed and demonstrated in action experimentally. The new device has successfully increased forward current without additional mask and increase of the area. Remarkable improvement in the reverse recovery characteristic of the new diode can be realized by electron irradiation. The fabricated ICs with the new diode operated at 3 kHz PWM carrier frequency

Keywords

bridge circuits; driver circuits; electron beam effects; power integrated circuits; power semiconductor diodes; semiconductor device breakdown; 3 kHz; 720 V; HVIC; PWM carrier frequency; breakdown characteristic; electron irradiation; forward current; half-bridge driver IC; high voltage diode; junction isolated substrate; multiple floating field plate structure; reverse recovery characteristic; Anodes; Breakdown voltage; Cathodes; Charge carrier lifetime; Diodes; Driver circuits; Electrons; MOSFET circuits; Pulse width modulation; Pulse width modulation inverters;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934609

Filename

934609