Optimization of safe-operating-area using two peaks of body-current in submicron LDMOS transistors

Author

Lee, S.K. ; Kim, C.J. ; Kim, J.H. ; Choi, Y.C. ; Kang, H.S. ; Song, C.S.

Author_Institution

Fairchild Korea Semicond. Co., Kyonggi, South Korea

fYear

2001

fDate

2001

Firstpage

287

Lastpage

290

Abstract

The analysis of hot-electron-limited SOA (Safe-Operating-Area) and electrical SOA using two peaks of body current in 20 V LDMOS transistors was investigated for the first time. The origin of the two peaks can be explained in terms of hot carrier injection phenomena. The first peak shows the appearance of weak impact ionization related to the device degradation and the second peak shows the occurrence of the snap-back phenomenon predicting device destruction, respectively

Keywords

hot carriers; impact ionisation; power MOSFET; semiconductor device breakdown; semiconductor device reliability; 20 V; 20 V LDMOS transistors; body current peaks; device degradation; device destruction; electrical SOA; hot carrier injection phenomenon; hot-electron-limited SOA; safe-operating-area optimization; snap-back phenomenon; submicron LDMOS transistors; weak impact ionization; Current measurement; Degradation; Doping; Hot carrier injection; Hot carriers; Impact ionization; Predictive models; Semiconductor optical amplifiers; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934611

Filename

934611