A study on a dual-voltage self-clamped IGBT for automotive ignition applications

Author

Shen, Z. John ; Robb, S.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Michigan Univ., Dearborn, MI, USA

fYear

2001

fDate

2001

Firstpage

295

Lastpage

298

Abstract

Self-clamped Inductive Switching (SCIS) energy capability is a critical parameter of device performance for IGBTs used in automotive ignition applications. In this paper, we studied a monolithic dual-voltage self-clamped IGBT to improve its SCIS energy capability. During an inductive turnoff process, the collector voltage of the proposed device is clamped first at a high level for a short period of time and then at a much lower level until the electromagnetic energy stored in the inductive coil is fully discharged. The concept has been verified and analyzed with extensive numerical device simulation. A monolithic prototype device has been designed and fabricated with a conventional eight-mask IGBT process. The experimental results are reported

Keywords

automotive electronics; electric ignition; insulated gate bipolar transistors; semiconductor device models; 350 to 450 V; 513 mJ; automotive ignition; collector voltage; dual-voltage self-clamped IGBT; eight-mask IGBT process; electromagnetic energy; inductive coil; inductive turnoff process; monolithic dual-voltage self-clamped IGBT; monolithic prototype device; numerical device simulation; self-clamped inductive switching energy capability; Analytical models; Automotive engineering; Coils; Electromagnetic devices; Electromagnetic induction; Ignition; Insulated gate bipolar transistors; Numerical simulation; Prototypes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934613

Filename

934613