Title :
Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness
Author :
Nakamura, Hideki ; Nakamura, Katsumi ; Kusunoki, Shigeru ; Takahashi, Hideki ; Tomomatsu, Yoshifiuni ; Harada, Masana
Author_Institution :
Mitsubishi Electr. Corp., Kumamoto, Japan
Abstract :
We have studied a suitable structure for 1200 V NPT-IGBTs from the viewpoint of total performance. We propose the wide cell pitch CSTBT (Carrier Stored Trench Bipolar Transistor) structure. As a result, small gate capacitance and short circuit ruggedness have been established by reducing MOS channel width. A small on-state voltage has been achieved by the carrier store effect of CSTBTs. To control the breakdown voltage and to suppress oscillation during short circuit operation, damping trench capacitors have been also prepared
Keywords :
capacitance; insulated gate bipolar transistors; power transistors; semiconductor device breakdown; short-circuit currents; 1200 V; MOS channel width reduction; NPT CSTBTs; NPT-IGBTs; breakdown voltage; carrier store effect; carrier stored trench bipolar transistor structure; damping trench capacitors; gate capacitance; on-state voltage; oscillation suppression; short circuit ruggedness; wide cell pitch CSTBT; Capacitance; Circuits; Current measurement; Delay; Density measurement; Diodes; Electrical resistance measurement; Insulated gate bipolar transistors; Low voltage; Thickness measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934614
