Title :
Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode
Author :
Nemoto, M. ; Otsuki, M. ; Kirisawa, M. ; Seki, Y. ; Naito, T. ; Gupta, R.N. ; Winterhalter, C.R. ; Chang, H.-R.
Author_Institution :
Device Technol. Lab., Fuji Electr. Co. R&D Ltd., Nagano, Japan
Abstract :
Experimental results of the IGBT turn-on characteristics using 1200 V/50 A Trench Oxide PiN Schottky (TOPS) diode as the free wheeling diode are described. Compared to the conventional PiN diode, the TOPS diode showed an approximately 25% reduction in the turn-on loss of the IGBT. A reduction of 40% in the peak collector current of the IGBT has been achieved which results in a substantial suppression in the noise emission
Keywords :
Schottky diodes; insulated gate bipolar transistors; leakage currents; losses; modules; p-i-n diodes; power semiconductor diodes; power semiconductor switches; 1200 V; 50 A; IGBT module; IGBT turn-on characteristics; TOPS diode; free wheeling diode; motor control; noise emission suppression; peak collector current; reverse leakage currents; switching noise emission; trench oxide pin Schottky diode; turn-on loss; Anodes; Insulated gate bipolar transistors; Leakage current; Noise reduction; Rectifiers; Research and development; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Switching loss;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934616
