Soft-switching turn-off characterization at high temperature of 1200 V trench IGBT using local lifetime control

Author

Azzopardi, S. ; Kawamura, A. ; Iwamoto, H.

Author_Institution

Bordeaux I Univ., Talence, France

fYear

2001

fDate

2001

Firstpage

319

Lastpage

322

Abstract

This study proposes a turn-off switching losses investigation at high temperature of 1200 V Trench IGBT using local lifetime control under soft-switching. Both zero-voltage and zero-current switching test configurations performed under various test conditions (dv/dt, di/dt, gate resistance, peak collector current, clamping voltage, temperature, hold-off time) allow to establish comparative diagrams and graphs performances with conventional Planar IGBT and to give useful database for devices modeling, design and optimization

Keywords

high-temperature electronics; insulated gate bipolar transistors; power semiconductor switches; 1200 V; design optimization; device model; high-temperature operation; local lifetime control; power semiconductor device; soft-switching; trench IGBT; turn-off switching loss; zero-current switching; zero-voltage switching; Clamps; Databases; Design optimization; Insulated gate bipolar transistors; Performance evaluation; Switching loss; Temperature control; Testing; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934619

Filename

934619