Title :
Design consideration of 1000 V merged PiN Schottky diode using superjunction sustaining layer
Author :
Napoli, Ettore ; Strollo, Antonio G M
Author_Institution :
Dept. of Electron. & Telecom. Eng., Univ. of Naples Federico II, Italy
Abstract :
The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for the calculation of breakdown voltage of power superjunction devices. Device performances are analyzed with 2D numerical simulations and compared to standard PiN and Schottky diodes
Keywords :
Schottky diodes; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; solid-state rectifiers; SJ-MPS rectifier; breakdown voltage; design optimization; electric field; merged PiN Schottky diode; numerical simulation; power device; superjunction sustaining layer; two-dimensional analytical model; Analytical models; Circuits; Electrostatics; MOSFETs; Numerical simulation; Poisson equations; Rectifiers; Schottky diodes; Telecommunications; Virtual reality;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934624
