• DocumentCode
    3256393
  • Title

    800 V/1A, 1-chip process for battery charger IC

  • Author

    Jeon, C.K. ; Kim, J.J. ; Choi, Y.S. ; Kim, M.H. ; Kim, S.L. ; Kang, H.S. ; Song, C.S.

  • Author_Institution
    New Technol. Dev. Team, Fairchild Korea Semicond. Co., Puchon, South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    355
  • Lastpage
    358
  • Abstract
    800 V, 1-chip IC for a battery charger with no epi. layer was successfully developed by using a specially well designed layout in which the drain metal of LDMOS was drawn out from each n-well and connected in low doped p-type substrate. When compared to 700 V sustaining voltage and 0.55 Ωcm2 Ron,sp in conventional layout, the experimental results showed that the sustaining voltage was found to be improved up to 800 V and Ron,sp to 0.38Ωcm2, respectively
  • Keywords
    MOS integrated circuits; battery chargers; 1 A; 800 V; LDMOS IC; battery charger; one-chip process; specific resistance; sustaining voltage; Batteries; Breakdown voltage; CMOS process; Costs; Doping; Drives; Energy consumption; Packaging; Power dissipation; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934628
  • Filename
    934628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3256393