DocumentCode :
3256438
Title :
Contributions to development of IGBT on SiC technologies
Author :
Avram, Marioara ; Brezeanu, G. ; Poenar, D.P. ; Simion, Monica ; Voitincu, C.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
368
Lastpage :
371
Abstract :
A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.
Keywords :
MOSFET; bipolar transistors; buffer layers; elemental semiconductors; equivalent circuits; insulated gate bipolar transistors; integrated circuit design; silicon; Darlington configuration; IGBT chip; MOSFET; SiC; SiC technology; buffer layer; cell equivalent circuit design; dynamic characteristics; guard ring-epilayer junction; insulated gate bipolar transistor; saturation current; silicon carbide; Charge carrier lifetime; Doping; Electric breakdown; Insulated gate bipolar transistors; Plasma temperature; Rectifiers; Silicon carbide; Thermal conductivity; Thermal stability; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434589
Filename :
1434589
Link To Document :
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