Contributions to development of IGBT on SiC technologies

Author

Avram, Marioara ; Brezeanu, G. ; Poenar, D.P. ; Simion, Monica ; Voitincu, C.

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

fYear

2004

fDate

6-8 Dec. 2004

Firstpage

368

Lastpage

371

Abstract

A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.

Keywords

MOSFET; bipolar transistors; buffer layers; elemental semiconductors; equivalent circuits; insulated gate bipolar transistors; integrated circuit design; silicon; Darlington configuration; IGBT chip; MOSFET; SiC; SiC technology; buffer layer; cell equivalent circuit design; dynamic characteristics; guard ring-epilayer junction; insulated gate bipolar transistor; saturation current; silicon carbide; Charge carrier lifetime; Doping; Electric breakdown; Insulated gate bipolar transistors; Plasma temperature; Rectifiers; Silicon carbide; Thermal conductivity; Thermal stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Print_ISBN

0-7803-8656-6

Type

conf

DOI

10.1109/ICM.2004.1434589

Filename

1434589