Title :
Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth
Author :
Yamauchi, Shoichi ; Urakami, Yasushi ; Suzuki, Naohiro ; Tsuji, Nobuhiro ; Yamaguchi, Hitoshi
Author_Institution :
Res Labs., Denso Corp., Aichi, Japan
Abstract :
A new trench filling epitaxial Si growth process has been proposed for the high aspect ratio doping region. This epitaxial process realizes the reducing void size in the trench compared with a conventional epitaxial process. The influence of the micro-void on multi-RESURF effect has been estimated by using numerical simulation. The decrease of breakdown voltage of simulated structures with micro-void that reflect experimental results is below 2.5% compared with ideal non-void structure
Keywords :
electric breakdown; elemental semiconductors; epitaxial growth; semiconductor doping; semiconductor growth; silicon; voids (solid); Si; Si epitaxial growth; breakdown voltage; fabrication; high aspect ratio doping region; micro-void; multi-RESURF effect; numerical simulation; trench filling; Doping; Epitaxial growth; Etching; Fabrication; Filling; Fluid flow; Heat treatment; MOSFETs; Numerical simulation; Scanning electron microscopy;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934630
