Title :
Two-dimensional analytical modeling of nanoscale electrically-shallow junction (EJ) fully depleted SOI MOSFET
Author :
Kumar, M. Jagadesh ; Orouji, Ali A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Abstract :
A new analytical surface potential and threshold voltage model for a SOI MOSFET device with electrically shallow junction is presented to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the side and main gate lengths and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide and also the silicon thin film. We demonstrate that the surface potential in the main channel region is "screened" from the changes in the drain potential resulting in reduced SCEs. Simulation results using a 2-D device simulator are used to verify the validity of this model for various cases.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; semiconductor device models; silicon-on-insulator; surface potential; thin films; 2D device simulator; Poisson equation; SOI MOSFET device; Si; nanoscale electrically shallow junction; short channel effect; silicon thin film; source-drain effect; surface potential; threshold voltage model; two dimensional analytical modeling; Analytical models; Dielectric thin films; Doping; MESFETs; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
DOI :
10.1109/ICM.2004.1434591