DocumentCode
3256513
Title
A novel gate drive circuit for low-loss system using IGBT saturation voltage characteristics
Author
Takizawa, Satoki ; Igarashi, Seiki ; Kuroki, Kazuo
Author_Institution
Fuji Electr. Corp. Res. & Dev. Ltd., Tokyo, Japan
fYear
2001
fDate
2001
Firstpage
377
Lastpage
380
Abstract
This paper proposes the new gate drive circuit for IGBTs to reduce the turn-off loss. The feature of the circuit is to drive an IGBT with plural gate resistors which were settled by the turn-off current levels. From the experiment and simulation results, the turn-off loss was cut to more than 50% in comparison with the conventional drive system
Keywords
driver circuits; insulated gate bipolar transistors; IGBT; gate drive circuit; saturation voltage; turn-off loss; Circuit simulation; Detectors; Insulated gate bipolar transistors; Inverters; Logic circuits; Logic devices; Research and development; Resistors; Surges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934633
Filename
934633
Link To Document